Device and method of operating the same

ABSTRACT

A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of provisional application Ser.62/566,119 filed on Sep. 29, 2017, entitled “CIRCUIT” the disclosure ofwhich is hereby incorporated by reference in its entirety.

BACKGROUND

In various circuit applications, heat dissipation plays an increasinglyimportant role. With the high gate count and high operating frequency ofmodern system-on-a-chip (SoC) implementations, the thermal issue isescalated in prominence, especially for 2.5D or 3D integrated circuit(IC) applications. Some areas on a chip may be relatively hot and othersmay be relatively cool, and monitoring of the “hot spots” may be neededfor effective circuit performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram of a device, in accordance with anembodiment of the present disclosure.

FIG. 2 is a schematic diagram of a sensor of the device shown in FIG. 1,in accordance with an embodiment of the present disclosure.

FIG. 3 is a schematic diagram of another sensor of the device shown inFIG. 1, in accordance with an embodiment of the present disclosure.

FIG. 4 is a circuit diagram of yet another sensor of the device shown inFIG. 1, in accordance with an embodiment of the present disclosure.

FIG. 5 is a schematic diagram of an oscillator of the device shown inFIG. 1, in accordance with an embodiment of the present disclosure.

FIG. 6 is a circuit diagram of another oscillator of the device shown inFIG. 1, in accordance with an embodiment of the present disclosure.

FIG. 7 is a circuit diagram of yet another oscillator of the deviceshown in FIG. 1, in accordance with an embodiment of the presentdisclosure.

FIG. 8 is a schematic diagram showing simulation results of the deviceshown in FIG. 1, in accordance with an embodiment of the presentdisclosure.

FIG. 9 is a top view of a system-on-a-chip (SOC) including the deviceshown in FIG. 1, in accordance with an embodiment of the presentdisclosure.

FIG. 10 is a flow diagram showing a method of operating a device, inaccordance with an embodiment of the present disclosure.

FIG. 11 is a flow diagram showing another method of operating a device,in accordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

FIG. 1 is a schematic diagram of a device 1, in accordance with anembodiment of the present disclosure. Referring to FIG. 1, the device 1includes a sensor 14 and an oscillator 12.

The sensor 14 functions to provide a temperature-sensitive voltage Vtsto the oscillator 12 at its output (labeled “Z”). In the presentembodiment, the temperature-sensitive voltage Vts is positivelycorrelated to temperature. However, the present disclosure is notlimited thereto. In some embodiments, the temperature-sensitive voltageVts is negatively correlated to temperature. In an embodiment, thesensor 14 is enabled in response to an enable signal.

The oscillator 12 receives the temperature-sensitive voltage Vts at itsvoltage input (labeled “VCTL”), and produces, based on thetemperature-sensitive voltage Vts, a signal SOUT at an oscillationfrequency at its output (labeled “ZN”). Further, the oscillator 12receives the signal SOUT at its input (labeled “IN”). The oscillationfrequency and temperature have a linear relationship, which facilitatescalculating temperature sensed by the sensor 14.

Moreover, the sensor 14 and the oscillator 12 are digital circuits,which will be illustrated in detail with reference to FIGS. 4, 6 and 7.As such, the device 10 is able to be formed within digital devices, suchas central processing units (CPU) and graphics processing units (GPU).Consequently, the device 10 is able to accurately sense the temperatureof the digital devices at any places of interest to a designer, whichwill be described in detail with reference to FIG. 9. Moreover, there isno need to prepare an analog-to-digital converter (ADC) which wouldotherwise be required by an analog sensor, such as a thermal diode, toconvert an analog signal to a digital signal. Furthermore, size of thedevice 10 is relatively small, and therefore is area efficient.

In contrast, in some existing approaches, a thermal diode is adopted tosense temperature of digital devices. Typically, the thermal diode is ananalog device. The analog device is required to be arranged far from thedigital devices to avoid signal interference. Since the thermal diode isspaced apart from the digital devices by a relatively large distance,the thermal diode may not be able to accurately sense the temperature ofthe digital circuits, let alone a place of interest to a designer withinthe digital circuits. Furthermore, size of the thermal diode isrelatively large, and therefore is area inefficient.

FIG. 2 is a schematic diagram of a sensor 14 of the device 10 shown inFIG. 1, in accordance with an embodiment of the present disclosure.Referring to FIG. 2, the sensor 14 includes a transistor M1 and acurrent source 22.

The transistor M1 is a diode-connected transistor, of which a drain isshort-circuited to a gate. Moreover, the transistor M1 is controlled bythe current source 22. A gate voltage of the transistor M1 serves as thetemperature-sensitive voltage Vst. In the present embodiment, thetransistor M1 is an NMOS (n-type metal-oxide-semiconductor) transistor.The present disclosure is not limited thereto. In some embodiments, thetransistor M1 includes a PMOS (p-type metal-oxide-semiconductor)transistor. In some embodiments, the transistor M1 includes anothersuitable device, such as a field-effect transistor (FET), a powerfield-effect transistor (FET), a double-diffusedmetal-oxide-semiconductor (DMOS) transistor, an insulated-gate bipolartransistor (IGBT), etc.

The current source 22 functions to generate a current to flow throughthe transistor M1. In the present embodiment, magnitude of the currentis independent of temperature.

In operation, the magnitude of the current generated by the currentsource 22 is kept unchanged as temperature increases. Contrarily, athreshold voltage of the transistor M1 increases as temperatureincreases. As such, a gate-to-source voltage Vgs1 of the transistor M1increases as temperature increases. The gate-to-source voltage Vgs1 ofthe transistor M1 can be deemed as the gate voltage Vg1 of thetransistor M1 since a source of the transistor M1 is short-circuited toa reference ground. As a result, the gate voltage Vg1 of the transistorM1 increases as temperature increases. Consequently, the sensor 14provides a temperature-sensitive voltage Vts to the oscillator 12.

In another embodiment, magnitude of the current is temperaturesensitive. Further, the magnitude of the current increases astemperature increases. As previously mentioned, the threshold voltage ofthe transistor M1 increases as temperature increases. Since both themagnitude of the current and the threshold voltage of the transistor M1increase as temperature increases, the degree of increase in thegate-to-source Vgs1 of the transistor M1 is relatively significant. Thatis, the gate-to-source Vgs1 is more sensitive to temperature. As aresult, temperature can be sensed relatively accurate.

A set of the current source 22 and the transistor M1 of the sensor 14are each a standard cell in a digital circuit design. As such, thesensor 14 is able to be formed within digital devices, such as CPUs,GPUs. Consequently, the sensor 14 is able to accurately sense thetemperature of the digital devices at any places of interest to adesigner.

FIG. 3 is a schematic diagram of another sensor 34 of the device 10shown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 3, the sensor 34 is similar to the sensor14 described and illustrated with reference to FIG. 2 except that, forexample, the sensor 34 further includes a voltage divider 36.

The voltage divider 36 functions to transform the gate voltage Vg intothe temperature-sensitive voltage Vts. In further detail, the voltagedivide 36 decreases a voltage level of the gate voltage Vg, such that avoltage level of the temperature-sensitive voltage Vts falls within avoltage operation range of the oscillator 12. For example, the gatevoltage Vg is 0.8 volts (V) and exceed an upper limit of a voltageoperation range by 0.2V. If the oscillator 12 directly receives andutilizes the gate voltage of 0.8V, the oscillator may functionabnormally. With the voltage divider 36, the gate voltage Vg istransformed to the temperature-sensitive voltage Vts whose voltage levelfalls within the voltage operation range of the oscillator 12.

FIG. 4 is a circuit diagram of yet another sensor 44 of the device 10shown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 4, the sensor 44 is similar to the sensor34 described and illustrated with reference to FIG. 3 except that, forexample, the sensor 44 includes a transistor M0, the current source 22includes a transistor M2, and the voltage divider 36 includestransistors M3, M4 and M5.

The transistor M0 serves as an activation device for activating thesensor 44. In further detail, in the present embodiment, the transistorM0 includes an NMOS transistor. A drain of the transistor M0 is directlyconnected to a source of the transistor M1. A source of the transistorM0 is connected to a reference ground. A gate of the transistor M0receives an enable signal EN. When the enable signal EN is logicallyhigh, the transistor M0 is conducted. As such, a source of thetransistor M1 can be deemed as being short-circuited to a referenceground. In some embodiments, the transistor M0 includes a PMOStransistor. In some embodiments, the transistor M0 includes anothersuitable device, such as an FET, a power FET, a DMOS transistor, anIGBT, etc. With the transistor M0, the sensor 44 can be activated whenneeded. There is no need to always keep the sensor 44 activated. As aresult, the sensor 44 is relatively power efficient.

The transistor M2 is a diode-connected transistor. In the presentembodiment, the transistor M2 includes a PMOS transistor. A source ofthe transistor M2 is connected to a supply voltage VDD. As such, thetransistor M2 serves as a current source. Moreover, a drain of thetransistor M2 is directly connected to a drain of the transistor M1. Insome embodiments, the transistor M2 includes an NMOS transistor. In someembodiments, the transistor M2 includes another suitable device, such asan FET, a power FET, a DMOS transistor, an IGBT, etc. With thetransistor M2 serving a current source generating a current controllingthe transistor M1, the temperature-sensitive voltage Vts can be obtainedas illustrated with reference to FIGS. 2 and 3.

The transistors M3, M4 and M5 are cascode connected. Gates of thetransistor M3, M4 and M5 are controllable by the enable signal EN. Inthe present embodiment, the transistors M3, M4 and M5 include an NMOStransistor. A source voltage of the transistor M5, a top transistor ofthe voltage divider 36, serves as the temperature-sensitive voltage Vts.However, the present disclosure is not limited thereto. A source voltageof any of the transistors M3, M4 and M5 can be selected as thetemperature-sensitive voltage Vts except for a source voltage of thelowest transistor of the voltage divider 36, depending on the voltageoperation range of the oscillator 12. If the source voltage of thetransistor M5 exceeds the voltage operation range, a source voltage ofthe transistor M4 may replace that of the transistor M5 as thetemperature-sensitive voltage Vts. Furthermore, in the presentembodiment, the amount of transistors adopted in the voltage divider 36is three. However, the present disclosure is not limited thereto. Theamount of transistors can be optimized based on the voltage operationrange of the oscillator 12. With the transistors M3, M4 and M5, the gatevoltage Vg of the transistor M1 is transformed to the voltage sensitivevoltage Vts whose voltage level falls within the voltage operation rangeof the oscillator 12.

In some embodiments, the transistor M3 includes a PMOS transistor. Insome embodiments, the transistor M3 includes another suitable device,such as an FET, a power FET, a DMOS transistor, an IGBT, etc.

In some embodiments, the transistor M4 includes a PMOS transistor. Insome embodiments, the transistor M4 includes another suitable device,such as an FET, a power FET, a DMOS transistor, an IGBT, etc.

In some embodiments, the transistor M5 includes a PMOS transistor. Insome embodiments, the transistor M5 includes another suitable device,such as an FET, a power FET, a DMOS transistor, an IGBT, etc.

FIG. 5 is a schematic diagram of an oscillator 12 of the device 10 shownin FIG. 1, in accordance with an embodiment of the present disclosure.Referring to FIG. 5, the oscillator 12 includes a digital delay cell 50and an adjustment device 52.

The digital delay cell 50 operates under a power domain defined by ahigh extreme limit voltage and a low extreme limit voltage VSS. The highextreme limit voltage refers to the supply voltage VDD, and therefore isalso labeled “VDD” for convenience. The digital delay 50 functions togenerate the signal VOUT in a digital-signal form at the output ZN ofthe oscillator 12. In the present embodiment, the digital delay cell 50includes an inverter. However, the present disclosure is not limitedthereto. In other embodiments, the digital delay cell 50 includes anysuitable digital device.

The adjustment device 52 functions to, based on thetemperature-sensitive voltage Vts, adjust a range of the power domainunder which the digital delay cell 50 operates, thereby adjusting adelay of the digital delay cell 50. In the present embodiment, the lowextreme limit voltage VSS is adjusted. However, the present disclosureis not limited thereto. In some appropriate circuit designs, the highextreme limit voltage VDD is adjusted. Alternatively, in someembodiments, both the high extreme limit voltage VDD and the low extremelimit voltage VSS are adjusted based on the temperature-sensitivevoltage Vts.

In operation, temperature is a first degree. Accordingly, thetemperature-sensitive voltage Vts exhibits a first voltage level. Inresponse to the first voltage level, the adjustment device 52 adjuststhe low extreme limit voltage VSS to a first limit voltage level V1.Based on the first limit voltage level V1, a delay of the digital delaycell 50 is adjusted. The digital delay cell 50, based on the adjusteddelay, generates the signal VOUT at a first oscillation frequency.

In another operation, temperature is a second degree. Accordingly, thetemperature-sensitive voltage Vts exhibits a second voltage level. Inresponse to the second voltage level, the adjustment device 52 adjuststhe low extreme limit voltage VSS to a second limit voltage level V2different from the first limit voltage level V1. Based on the secondlimit voltage level V2, the delay of the digital delay cell 50 isadjusted. The digital delay cell 50, based on the adjusted delay,generates the signal VOUT at a second oscillation frequency differentfrom the first oscillation frequency.

The oscillation frequency is different as the temperature is different.As a result, temperature can be calculated based on the oscillationfrequency. Moreover, the oscillation frequency and temperature have alinear relationship, which facilitates calculating temperature.

Moreover, the digital delay cell 50 and the adjustment device 52 of thedevice 10 are digital circuits, which will be illustrated in detail withreference to FIGS. 6 and 7. As such, the device 10 is able to be formedwithin digital devices, such as CPUs and GPUs. Consequently, the device10 is able to accurately sense the temperature of the digital devices atany places of interest to a designer. Moreover, since the digital delaycell 12 is a digital circuit, the signal VOUT generated by the digitalcell 12 is therefore a digital signal. As such, there is no need toprepare an ADC which would otherwise be required by an analog sensor,such as a thermal diode, to convert an analog signal to a digitalsignal. Furthermore, size of the device 10 is relatively small, andtherefore is area efficient.

FIG. 6 is a circuit diagram of another oscillator 62 of the device 10shown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 6, the adjustment device 52 includes atransistor M6, and the digital delay cell 50 includes transistors M7 andM8.

The transistor M6 functions to adjust a drain voltage of the transistorM6 based on the temperature-sensitive voltage Vts. In further detail, agate of the transistor M6 is controllable by the temperature-sensitivevoltage Vts. A drain voltage of the transistor M6 serves as the lowextreme limit voltage VSS. A drain of the transistor M6 is directlyconnected to a source of the transistor M7. In the present embodiment,the transistor M6 includes an NMOS transistor. However, the presentdisclosure is not limited thereto. In some embodiments, the transistorM6 includes a PMOS transistor. In some embodiments, the transistor M6includes another suitable device, such as an FET, a power FET, a DMOStransistor, an IGBT, etc. With the transistor M6, the power domain canbe adjusted based on the temperature-sensitive voltage Vts, as will bedisclosed in detail below.

The transistors M7 and M8 form the delay cell 50. In the presentembodiment, the transistors M7 and M8 includes an NMOS transistor and aPMOS transistor, respectively. The source of the transistor M8 receivesthe high extreme limit voltage VDD of the power domain. The source ofthe transistor M7 receives the low extreme limit voltage VSS of thepower domain. The signal VOUT is provided at drains of the transistor M7and M8. In some embodiments, the transistor M7 includes a PMOStransistor. In some embodiments, the transistor M7 includes anothersuitable device, such as an FET, a power FET, a DMOS transistor, anIGBT, etc. In some embodiments, the transistor M8 includes an NMOStransistor. In some embodiments, the transistor M8 includes anothersuitable device, such as an FET, a power FET, a DMOS transistor, anIGBT, etc.

In operation, when temperature is relatively high, a voltage level ofthe temperature-sensitive voltage Vts is relatively high. In response tothe relatively high voltage level, the transistor M6 conducts relativelywell. The drain voltage, serving as the low extreme limit voltage VSS,of the transistor M6 is pulled down to a voltage level relatively closeto a reference ground. In response to the relatively low drain voltage,given that the high extreme limit voltage VDD kept unchanged, a voltagecross the transistors M7 and M8 is relatively high. As such, a delay isrelatively short. Therefore, the oscillation frequency of the signalVOUT is relatively high.

In another operation, when temperature is relatively low, a voltagelevel of the temperature-sensitive voltage Vts is relatively low. Inresponse to the relatively low voltage level, the transistor M6 conductsrelatively not well. The drain voltage, serving as the low extreme limitvoltage VSS, of the transistor M6 is pulled down to a voltage levelrelatively not close to a reference ground. In response to therelatively high drain voltage, given that the high extreme limit voltageVDD kept unchanged, a voltage cross the transistors M7 and M8 isrelatively low. As such, a delay is relatively long. Therefore, theoscillation frequency of the signal VOUT is relatively low.

FIG. 7 is a circuit diagram of yet another oscillator 72 of the device10 shown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 7, the oscillator 72 is similar to theoscillator 62 described and illustrated with reference to FIG. 6 exceptthat, for example, the oscillator 72 further includes a transistor M9.

The transistor M9 includes a PMOS transistor. A source of the transistorM9 receives the high extreme limit voltage VDD. A gate of the transistorM9 receives a reference ground. A drain of the transistor M9 is directlyconnected to the source of the transistor M8. With the transistor M9,the oscillation frequency is more sensitive to temperature.

FIG. 8 is a schematic diagram showing simulation results of the deviceshown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 8, a horizontal axis represents a degreein Celsius; and a vertical axis represents the oscillation frequency ofthe signal VOUT. Simulation is performed under three corner cases, aslow-to-slow global (SSG) corner case, a typical-to-typical (TT) cornercase, and a fast-to-fast global (FFG) corner case. Simulation resultsunder the SSG corner case are depicted as triangle. Simulation resultsunder the TT corner case are depicted as rectangular. Simulation resultsunder the FFG corner case are depicted as diamond.

As shown in FIG. 8, the oscillation frequency and temperature have alinear relationship, which facilitates calculating temperature. Asensitivity of the device 10 is about 6.8 MHz/degree. Operation range oftemperature ranges from about −40° C. to about −20° C.

FIG. 9 is a top view of a system-on-a-chip (SOC) 92 including the device10 shown in FIG. 1, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 9, the SOC 92 includes a digital device94, such as CPUs and GPUs. Since the device 10 and the digital device 94are digital device, the device 10 can be formed within the digitaldevice 94. In particular, the device 10 can be formed at a place near aspot of interest to a designer. For example, a circuit designer wouldlike to know temperature at a spot 97 within the digital device 10. Thedevice 10 can be formed at the left upper corner of the digital device10 so as to accurately sense temperature at the spot 97.

In some existing semiconductor devices, a thermal diode is adopted tosense temperature of the digital device 94. The analog device isrequired to be arranged far from the digital devices to avoid signalinterference. Since the thermal diode is spaced apart from the digitaldevices by a relatively large distance, for example, at a place 87depicted in FIG. 9, the thermal diode may not be able to accuratelysense temperature of the digital circuits. Furthermore, size of thethermal diode is relatively large, and therefore is area inefficient.

Moreover, in addition to the digital device 94 and the device 10, theSOC 92 further includes a monitor device 96 and a processing system 98.The monitor device 96 and the processing system 98 have the sameinterface, such as a PL301 interface. As such, the monitor device 96 andthe processing system 98 are able to communicate with each other. In anembodiment, the monitor device 96 includes an on-line interactionmonitor module (OLIMM).

The monitor device 96 includes an e-fuse 91 and a register bank 93. Thee-fuse 91 stores two sets of correlation between an oscillationfrequency and temperature, which have been calibrated.

The register bank 93 stores information on an oscillation frequencyproduced by the device 10, and registers the two sets of correlation.

When it is required to know the present temperature, the processingsystem 98 calculates the present temperature based on the two sets ofcorrelation stored by the e-fuse 91 and the present oscillationfrequency stored by the register bank 93.

In operation, the processing system 98 requests the two sets ofcorrelation. The two sets of correlation stored in the e-fuse 91 areregistered to the register bank 93. The processing device 98 accessesthe register bank 93 to obtain the two sets of correlation. Whenever thedevice 10 accesses the register bank 93, the register bank 93 stores thenew oscillation frequency from the device 10.

With the register bank 93 and the processing system 98, temperature canbe calculated in time, which means that an on-line interaction operationcan be completed. Moreover, oscillation frequency obtained from thedevice 10 can be registered in the register bank 93. As such, there isno need to reserve bumps 99 to transmit the information on theoscillation frequency to another work station. As a result, usage of thebumps 99 is relatively efficient.

Contrarily, in some existing approaches, it is required to reserve bumpsto transmit information on a voltage, or current obtained from a thermaldiode to another work station. As a result, an on-line interactionoperation cannot be completed. Moreover, usage of bumps is relativelyinefficient.

FIG. 10 is a flow diagram of a method 30 operating a device, inaccordance with an embodiment of the present disclosure. Referring toFIG. 10, the method 30 includes operations 31, 32 and 33. In operation31, a temperature-sensitive voltage is provided. In operation 32, adelay is, based on the temperature-sensitive voltage, adjusted. Inoperation 33, a signal at an oscillation frequency is, based on theadjusted delay, provided.

FIG. 11 is a flow diagram of another method 40 operating a device, inaccordance with an embodiment of the present disclosure. Referring toFIG. 11, the method 40 includes operations 41, 42 and 43. In operation41, a temperature-sensitive voltage is provided. In operation 42, arange of a power domain under which a digital delay cell of anoscillator operates is, based on the temperature-sensitive voltage,adjusted. In operation 43, a signal is provided by the digital delaycell.

Some embodiments have one or a combination of the following featuresand/or advantages. In some embodiments, a device is provided. The deviceincludes a sensor and an oscillator. The sensor provides atemperature-sensitive voltage. The oscillator includes a digital delaycell and an adjustment device. The adjustment device, based on thetemperature-sensitive voltage, adjusts a delay of the digital delaycell, wherein the digital delay cell produces, based on the adjusteddelay, a signal at an oscillation frequency.

In some embodiments, a device is provided. The device includes a sensorconfigured to provide a temperature-sensitive voltage; an oscillatorincluding: a digital delay cell; an adjustment device configured toadjust, based on the temperature-sensitive voltage, a range of a powerdomain under which the digital delay cell operates, wherein the digitaldelay cell produces a signal at an oscillation frequency

In some embodiments, a method is provided. The method includes:providing a temperature-sensitive voltage; adjusting a delay based onthe temperature-sensitive voltage; and providing a signal at anoscillation frequency based on the adjusted delay.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device, comprising: a sensor configured toprovide a temperature-sensitive voltage; an oscillator including: adigital delay cell; and an adjustment device configured to, based on thetemperature-sensitive voltage, adjust a delay of the digital delay cell,wherein the digital delay cell produces, based on the adjusted delay, asignal at an oscillation frequency.
 2. The device as claimed in claim 1,wherein the adjustment device is configured to adjust, based on thetemperature-sensitive voltage, a power domain under which the cell delayoperates.
 3. The device as claimed in claim 1, wherein the sensorincludes: a current source; and a transistor being a diode-connectedtransistor and controlled by the current source, wherein a gate voltageof the transistor serves as the temperature-sensitive voltage.
 4. Thedevice as claimed in claim 3, wherein the current source is configuredto generate a current to flow through the transistor, wherein amagnitude of the current is independent of temperature.
 5. The device asclaimed in claim 3, wherein the current source is configured to generatea current to flow through the transistor, wherein a magnitude of thecurrent is sensitive to temperature.
 6. The device as claimed in claim1, wherein the sensor includes: a current source; and a transistor beinga diode-connected transistor and controlled by the current source, andwherein the sensing circuit further includes: a voltage dividerconfigured to transform the gate voltage into the temperature sensitive.7. The device as claimed in claim 6, the transistor being a secondtransistor, wherein the sensing circuit further includes a firsttransistor, a gate of which controllable by an enable signal, a drain ofthe first transistor directly connected to a source of the secondtransistor, the current source including a third transistor, a drain ofwhich directly connected to a drain of the second transistor, the thirdtransistor being a diode-connected transistor.
 8. The device as claimedin claim 7, wherein the voltage divider circuit includes a plurality oftransistors cascode connected, wherein gates of the transistors arecontrollable by the enable signal.
 9. The device as claimed in claim 8,wherein a source voltage of a top transistor of the transistors servesas the temperature sensitive.
 10. A device, comprising: a sensorconfigured to provide a temperature-sensitive voltage; an oscillatorincluding: a digital delay cell; an adjustment device configured toadjust, based on the temperature-sensitive voltage, a range of a powerdomain under which the digital delay cell operates, wherein the digitaldelay cell produces a signal at an oscillation frequency.
 11. The deviceas claimed in claim 10, wherein the power domain is defined by a highextreme limit voltage and a low extreme limit voltage, the adjustmentdevice configured to, based on the temperature-sensitive voltage, adjustthe low extreme limit voltage.
 12. The device as claimed in claim 10,wherein the adjustment device includes a seventh transistor, a gate ofwhich controllable by the temperature-sensitive voltage, a drain voltageof the seventh transistor serving as the low extreme limit voltage. 13.The device as claimed in claim 12, wherein the digital delay cellincludes an inverter.
 14. The device as claimed in claim 13, wherein theinverter includes an eighth transistor and a ninth transistor, wherein asource of the eighth transistor is directly connected to the drain ofthe seventh transistor, and a source of the ninth transistor receives ahigh extreme limit voltage of the power domain.
 15. The device asclaimed in claim 14, wherein the signal is provided at drains of theseventh transistor and the eighth transistor.
 16. The device as claimedin claim 12, wherein the sensing circuit includes: a current source; anda transistor being a diode-connected transistor and controlled by thecurrent source, a gate of the transistor directly connected to the gateof the seventh transistor.
 17. The device as claimed in claim 12,wherein the sensing circuit further includes a voltage divider, thevoltage divider including a plurality of transistors cascode connected,gates of the transistors controllable by the enable signal.
 18. Amethod, comprising: providing a temperature-sensitive voltage; adjustinga delay based on the temperature-sensitive voltage; and providing asignal at an oscillation frequency based on the adjusted delay.
 19. Themethod as claimed in claim 18, further comprising: adjusting, based onthe temperature-sensitive voltage, a range of a power domain under whicha digital delay cell of an oscillator operates; and providing the signalby the digital delay cell.
 20. The method as claimed in claim 18,further comprising: controlling a transistor by a current source,wherein the transistor being a diode-connected transistor; providing agate voltage of the transistor as the temperature sensitive.